High Sensitive pH Sensor with Graphene based Dual-Gate ISFET

Ahmed Harb; Mustafa Istanbullu

doi:10.5281/zenodo.8007889

Authors

Ahmed Harb CukurovaUniversity, Faculty of Engineering, Department of BiomedicalEngineering, 01330, Adana, Türkiye. https://orcid.org/0009-0005-7555-5216
Mustafa Istanbullu CukurovaUniversity, Faculty of Engineering, Department of BiomedicalEngineering, 01330, Adana, Türkiye. https://orcid.org/0000-0001-5414-7380

DOI:

https://doi.org/10.5281/zenodo.8007889

Keywords:

graphene, TCAD, sensitivity, pH sensing, ISFET

Abstract

Electrochemical sensors are devices that use electrochemical reactions to detect and measure the concentration of analytes in a sample. As an electrochemical sensor, an ion-sensitive field-effect transistor, ISFET, is the basic structure of a biosensor. This work presents a high-sensitive pH sensor with a graphene-based dual-gate ISFET. Design and simulations of the proposed device are performed on SILVACO TCAD software. Graphene and aluminum oxide are used as channel and sensing film, respectively. The channel thickness is 10 nm, while the thickness of the device is 800 nm. The transfer and output characteristic curves of the device are obtained through simulations. The effects of the back gate, channel material, and sensitive layer on device performance are evaluated by assessing the electrical characteristics, threshold voltage, and drain current. The sensitivity of the proposed device is achieved, approximately 18.06 times the Nernst limit, as 1066 mv/pH, which is the best performance score in the literature. The proposed device offers a novel ISFET structure with reliable and higher detection sensitivity.

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