Effect of Oxygen Percentage on the Energy Band Gap of Ga2O3 Thin Films Deposited by RF Magnetron Sputtering Method

Hicret Hopoğlu; Hafize Seda Aydınoğlu; Ebru Şenadım Tüzemen

doi:10.5281/zenodo.7464994

Authors

Hicret Hopoğlu Cumhuriyet University https://orcid.org/0000-0003-4797-0840
Hafize Seda Aydınoğlu Cumhuriyet University https://orcid.org/0000-0003-0416-8276
Ebru Şenadım Tüzemen Sivas Cumhuriyet Üniversitesi https://orcid.org/0000-0001-9166-7422

DOI:

https://doi.org/10.5281/zenodo.7464994

Keywords:

Thin films, Ga2O3, Band gap, Magnetron sputtering, Optical properties

Abstract

In this study, Ga₂O₃ films were deposited on a sapphire substrate using the Radio Frequency (RF) magnetron sputtering technique. The films were produced at 100 W power and at different oxygen percentages of 0%, 2%, and 4%. Then, the films were annealed in air at 900°C. The transmittance measurements of all films were performed and the energy band gaps were calculated. The energy band gap between before and after annealing increased as the oxygen percentage increased. Based on these results, it was revealed that the O₂ concentration plays a crucial role in controlling the optical properties of Ga₂O₃, which can greatly affect the device performance.

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